• Teflon etch cell for preparing porous Si samples with 1.20 cm2 projected area
  Glass top for sealing the etch cell to perform anaerobic electrochemistry
  Clamp to hold glass tops in place

Etch cell to make and modify porous Si (2.5 Mb)
Animated clip depicting the cell used for etching porous Si and the top that allows anaerobic electrochemical modification of the surface.

Etching porous Si (2.1 Mb)
A movie showing the preparation of a porous Si sample.

Detection of acetone with a porous Si photonic crystal (3.7 Mb)
A movie showing a porous Si Bragg stack being dosed (2x) with acetone in a vacuum chamber.

Facilities (in Sailor labs):
800 sq ft office/computer space
1500 sq ft wet lab space including chemical hoods, deionized water, inert gas handling equipment, conventional glove-box and Schlenk line apparatus for manipulation of air-sensitive compounds, explosion-proof freezer/refrigerator for chemical storage.
500 sq ft instrumentation lab space

Equipment (in Sailor labs):
1. Steady-state Photoluminescence apparatus with CCD detectors covering the range 0.25-0.95 microns, InGaAs and PbS scanning systems with lock-in detection capable of covering the wavelength range 0.8-3.0 microns. Excitation sources include 250W Hg arc lamp (UV and Blue lines), 10 mW He/Cd laser (UV and Blue optics), laser diodes at 695 and 730 nm, and a tungsten lamp/monochrometer for spectral response measurements.
2. Time-resolved photoluminescence apparatus including Quantel™ tripled YAG laser/Opotec™ Optical Parametric Oscillator laser for pulsed (5 ns) lifetime measurements, with wavelength range 0.450-0.7 microns. Detection with photomultiplier, preamps, and 500 MHz storage oscilloscope. Overall system response 20 ns.
3. Nicolet Fourier-transform infrared spectrometer with diffuse reflectance attachment and environmental chamber capable of temperature control from ambient to 500 °C. Spectrometer has CsI optics capable of covering the range 260-5000 cm-1.
4. Nicolet Fourier-transform infrared Microscope/spectrometer.
5. UV Visible diode array absorption spectrophotometer covering 190-820 nm.
6. Perkin-Elmer LS 50B Fluorescence and Phosphorescence spectrometer with red-enhanced photomultiplier for acquisition of excitation and emission data to 950 nm.
7. Digital Instruments Nanoscope III-a Atomic Force and Scanning Tunneling Microscope.
8. Acton 0.5 M Raman spectrometer with TE-cooled CCD detector and holographic notch filters for He/Ne and red diode lasers.
9. Portable turbo pumping station capable of reaching 10-5 Torr. Various pressure gauges, including thermocouple, cold cathode ionization, and Baratron pressure transducers capable of covering 10-8-1000 Torr range.
10. 4-point conductivity probe and electronics for wafer resistivity characterization.
11. Computer-controlled photoelectrochemical patterning tool (homebuilt) for patterned etch of semiconductor wafers up to 6" diameter. Resolution of 50 mm.
12. Single and double-channel Ocean Optics spectrometers, fiber optic attachments, microscope optics, and light sources for acquisition of optical reflectivity data. Spectral wavelength range 400-1000 nm.

Available in the Inorganic Division

Available at the University:
1. High resolution Transmission Electron Microscope (TEM) 300 keV Philips CM30, with a Link X-ray energy dispersive detector, sample preparation lab and darkroom facilities.
2. Two Cambridge Electron Microprobe, Model 360 scanning electron microscopes with a Link X-ray energy dispersive detector and analyzer attachment.
3. Rutherford backscattering and ion implantation facility, Ionex Tandetron Accelerator, 1 MV terminal voltage, AI Accelerator, 200 keV.
4. Multiple Crystal X-Ray Diffraction, Blake/Philips Instruments with Bartels 4-crystal monochrometer.
5. X-Ray Photoelectron Spectroscopy (XPS, ESCA) Perkin Elmer dedicated system.
6. Auger Sputter Depth Profiling attachment to Perkin Elmer XPS system.
7. Clean rooms with microlithography, annealing, and metal deposition systems
8. BET adsorption/surface area measurement apparatus. Compatible with N2 and CO2 adsorbates.