Posters

Instrumentation development for the deposition of phthalocyanine thin films for the fabrication of chem-FETs

Displacement of Surface As Atoms by Insertion of Oxygen Atoms into As-Ga Backbonds  

Scanning Tunneling Microscopy and Spectroscopy of Gallium Oxide and Indium Oxide Deposition on GaAs(001)-(2x4)

In Search of a Practical Enhancement-Mode GaAs Based MOSFET Device

Passivation of Ga2O3-Gallium Arsenide Interfaces Using Hydrogen Plasma

Chemical Bonding Requirements for Forming Passive Semiconductor Interfaces

Ultra-Low Coverage Spontaneous Etching and Hyperthermal Desorption of Aluminum Chlorides from Cl2/Al(111)

Papers

64. R.D. Yang, J. Park, C.N. Colesniuc, I.K. Schuller, W.C. Trogler and A.C. Kummel, Ultra-low drift in organic thin-film transistor chemical sensors by pulsed gating,  J. of App. Phys. (accepted)

63. R.D. Yang, T. Gredig, C.N. Colesniuc, I.K. Schuller, J. Park, W.C. Trogler and A.C. Kummel. Ultrathin organic transistors for chemical sensing.  App. Phys. Lett. 90, 263506 (2007)

62. F.I. Bohrer, A. Sharoni, C. Colesniuc, J. Park, I.K. Schuller, A.C. Kummel, and W.C. Trogler. Gas Sensing Mechanism in Chemiresistive Cobalt and Metal-Free Phthalocyanine Thin Films. J. Am. Chem. Soc. 129, 5640 (2007)

61. Winn DL, Hale MJ, Grassman TJ, Sexton JZ, Kummel AC. Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface. J. Chem. Phys. 126, 084703 (2007)

60. Yang RD, Fruhberger B, Park J, Kummel AC. Chemical identification using and impedance sensor based on dispersive charge transport. Appl. Phys. Lett. 88, 074104 (2006)

59. Poon GC, Santagata NM, Grassman TJ, Kummel AC. Angular distribution of ejected Cl from direct abstractive chemisorption of Cl₂/Al(111). In preparation.

58. Miller KA, Yang RD, Hale MJ, Park J, Fruhberger B, Colesniuc CN, Schuller IK, Kummel AC, Trogler WC. Electrode independent chemoresistive response for cobalt phthalocyanine in the space charge limited conductivity regime. J. Phys. Chem. B., 110 (1), Jan 12 2006, pp361-366.

57. Hale MJ, Winn DL, Grassman TJ, Kummel AC, Droopad R. Chemically resolved scanning tunneling microscopy imaging of Al on p-type Al_0.1Ga_0.9As(001)-c(2*8)/(2*4). J. Chem. Phys., vol. 122, no. 12, 22 March 2005, pp. 124702-1-4. PDF

56. Grassman TJ, Poon GC, Kummel AC. Low coverage spontaneous etching and hyperthermal desorption of aluminum chlorides from Cl₂/Al(111). J. Chem. Phys., vol. 121, no. 18, 8 Nov. 2004, pp. 9018-30. PDF

55. Sexton JZ, Kummel, AC. Island morphology statistics and growth mechanism for oxidation of the Al(111) surface with thermal O₂ and NO. J. Chem. Phys., vol. 121, no. 13, 1 Oct. 2004, pp. 6518-24.

54. Hale MJ, Sexton JZ, Winn DL, Kummel AC, Erbudak M, Passlack M. The influence of bond flexibility and molecular size on the chemically selective bonding of In₂O and Ga₂O on GaAs(001)-c(2*8)/(2*4). J. Chem. Phys., vol. 120, no. 12, 22 March 2004, pp. 5745-54.

53. Poon GC, Grassman TJ, Gumy JC, Kummel AC. Direct and precursor-mediated hyperthermal abstractive chemisorption of Cl₂/Al(111). J. Chem. Phys., vol. 119, no. 18, 8 Nov. 2003, pp. 9818-28. PDF

52. Sexton JZ, Yi SI, Hale M, Kruse P, Demkov AA, Kummel AC. Displacement of surface arsenic atoms by insertion of oxygen atoms into as-Ga backbonds. J. Chem. Phys., vol. 119, no. 17, 1 Nov. 2003, pp. 9191-8.

51. Hale MJ, Yi SI, Sexton JZ, Kummel AC, Passlack M. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2*8)/(2*4). J. Chem. Phys., vol. 119, no. 13, 1 Oct. 2003, pp. 6719-28.

50. Sexton JZ, Kummel AC. Comparison of density functional theory methods as applied to compound semiconductor-oxide interfaces: slab versus cluster models. J.V.S.T. B, vol. 21, no. 4, July 2003, pp. 1908-14.

49. Lee SM, Lee S, Scheffler M, McLean JG, Kruse P, Guo-Ping J, Ruda HE, Kummel AC. Comment on "Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8*2)" [and Reply]. Phys. Rev. Lett., vol. 89, no. 23, 2 Dec. 2002, pp. 239601-1-2-1.

48. Komrowski AJ, Ternow H, Razaznejad B, Berenbak B, Sexton, JZ, Zoric I, Kasemo B, Lundqvist BI, Stolte S, Kleyn AW, Kummel AC. Dissociative adsorption of NO upon Al(111): Orientation dependent charge transfer and chemisorption reaction dynamics. J. Chem. Phys., vol. 117, no. 18, Nov. 2002, pp. 8185-9.

47. Passlack M, Abrokwah JK, Droopad R, Yu Z, Overgaard C, Yi SI, Hale MJ, Sexton JZ, Kummel AC. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor. IEEE Elec. Dev. Lett., vol. 23, no. 9, Sept. 2002, pp. 508-10.

46. Komrowski AJ, Sexton JZ, Kummel AC, Binetti M, Weisse O, Hasselbrink E. Oxygen abstraction from dioxygen on the Al(111) surface. Phys. Rev. Lett., vol. 87, no. 24, 10 Dec. 2001, pp. 246103/1-4.

45. Yi SI, Kruse P, Hale M, Kummel AC. Adsorption of atomic oxygen on GaAs(001)-(2*4) and the resulting surface structures. J. Chem. Phys., vol. 114, no. 7, 15 Feb. 2001, pp. 3215-23.

44. Kruse P, McLean JG, Kummel AC. Chemically selective adsorption of molecular oxygen on GaAs(100)c(2*8). J. Chem. Phys., vol. 113, no. 20, 22 Nov. 2000, pp. 9224-32.

43. Kruse P, McLean JG, Kummel AC. Realative reactivity of arsenic and gallium dimers and backbonds during the adsorption of molecular oxygen on GaAs(100)(6*6). J. Chem. Phys., vol. 113, no. 20, 22 Nov. 2000, pp. 9217-23.

42. McLean JG, Kruse P, Jiang Guo-Ping, Ruda HE, Kummel AC. Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8*2). Phys. Rev. Lett., vol. 85, no. 4, 14 Aug. 2000, pp. 1488-91.

41. Kruse P, McLean JG, Kummel AC. Localized excess negative charges in surface states of the clean Ga-rich GaAs(100)c(8*2)/(4*2) reconstruction as imaged by scanning tunneling microscopy. J. Chem. Phys., vol. 113, no. 6, 8 Aug. 2000, pp. 2060-3.

40. McLean JG, Kruse P, Guo-Ping Jiang, Ruda HE, Kummel AC. Clustering of charged adsorbates: scanning tunneling microscopy observations of chlorine on gallium-rich GaAs(001)-c(8*2). J. Phys. Chem. A, vol. 103, no. 49, 9 Dec. 1999, pp. 10364-8.

39. Liu Y, Komrowski AJ, Kummel AC. Scanning tunneling microscopy identification of surface species on the As-rich GaAs(001)-2*4:Br surface. Surf. Sci., vol. 436, no. 1-3, 10 Aug. 1999, pp. 29-37.

38. McLean JG, Kruse P, Kummel AC. Atomic structure determination for GaAs(001)-(6*6) by STM. Surf. Sci., vol. 424, no. 2-3, 1 April 1999, pp. 206-18.

37. Yong Liu, Komrowski AJ, Kummel AC. Reaction dynamics of the As-rich GaAs(001)-2*4 surface with monoenergetic Br₂ molecules: A scanning tunneling microscopy study. J. Chem. Phys., vol. 110, no. 9, 1 March 1999, pp. 4608-15.

36. Pettus KA, Ahmadi TS, Lanzendorf EJ, Kummel AC. Comparison of chemical selectivity and kinetic energy release in Si_(s) + ICl_(g) and H_(g) + ICl_(g). J. Chem. Phys., vol. 110, no. 9, 1 March 1999, pp. 4641-6.

1. Hanisco TF, Kummel AC. Resonantly Enhanced Multiphoton Ionization of N₂ a"¹Σ_g⁺ (ν' = ν") ← X¹Σ_g⁺ (ν" = 0-2). 1. Determination of Rotational Populations and Virtual State Character. J. Phys. Chem., vol. 95, no. 22, 31 Oct. 1991, pp. 8565-74.

Last updated: 06/05/06